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| PD -91591A IRG4P254S INSULATED GATE BIPOLAR TRANSISTOR Features * Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * Industry standard TO-247AC package C Standard Speed IGBT VCES = 250V G E VCE(on) typ. = 1.32V @VGE = 15V, IC = 55A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions * High Power density * Lower conduction losses than similarly rated MOSFET * Lower Gate Charge than equivalent MOSFET * Simple Gate Drive characteristics compared to Thyristors TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 250 98* 55 196 196 20 160 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.24 --- 6.0 (0.21) Max. 0.64 --- 40 --- Units C/W g (oz) * Package limited to 70A www.irf.com 1 4/15/2000 IRG4P254S Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 250 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage T 18 -- -- V VGE = 0V, IC = 1.0A V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.33 -- V/C VGE = 0V, IC = 1.0mA -- 1.32 1.5 IC = 55A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage -- 1.69 -- IC =98A See Fig.2, 5 V -- 1.31 -- IC =55A , TJ = 150C VGE(th) Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -12 -- mV/C VCE = VGE, IC = 250A gfe Forward Transconductance U 43 63 -- S VCE = 100V, IC = 55A -- -- 250 VGE = 0V, VCE = 250V ICES Zero Gate Voltage Collector Current A -- -- 2.0 VGE = 0V, VCE = 10V, TJ = 25C -- -- 1000 VGE = 0V, VCE = 250V, TJ = 150C IGES Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V V(BR)CES V(BR)ECS Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 200 29 66 40 44 270 510 0.38 3.50 3.88 38 45 400 940 6.52 13 4500 510 100 Max. Units Conditions 300 IC =55A 44 nC VCC = 200V See Fig. 8 99 VGE = 15V -- -- TJ = 25C ns 400 IC = 55A, VCC = 200V 760 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ See Fig. 9, 10, 14 5.3 -- TJ = 150C, -- IC = 55A, VCC = 200V ns -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ See Fig. 11, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0, (See fig. 13a) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4P254S 120 F o r b o th : 100 T riangu lar wave : I D uty cycle : 5 0% TJ = 125 C T s in k = 90C G ate drive as s pe cified P ow e r D is s ip a t ion = 4 0 W Load Current ( A ) 80 S q ua re w ave: 60 C lam p vo lt a g e : 8 0 % o f ra t e d 6 0 % o f ra t e d volta ge I 40 20 Ide a l d io de s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) 100 I C , Collector-to-Emitter Current (A) 100 TJ = 150 o C TJ = 150 o C 10 10 TJ = 25 o C TJ = 25 oC V GE = 15V 20s PULSE WIDTH 1 10 1 0.1 1 5 6 7 V CC = 50V 5s PULSE WIDTH 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4P254S 100 CURRENT LIMITED BY THE PACKAGE 3.0 80 60 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A) I C = 110 A 2.0 40 20 I C = 55 A I C =27.5 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4P254S 8000 VGE , Gate-to-Emitter Voltage (V) VGE = Cies = Cres = Coes = 0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc 20 VCC = 200V I C = 55A 16 6000 C, Capacitance (pF) Cies 4000 12 8 2000 Coes Cres 4 0 1 10 100 0 0 40 80 120 160 200 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5.0 Total Switching Losses (mJ) Total Switching Losses (mJ) VCC = 200V VGE = 15V TJ = 25 C I C = 55A 100 5.0 RG = 5Ohm VGE = 15V VCC = 200V IC = 110 A 10 IC = 55 A IC = 27.5 A 4.0 1 3.0 0 RG Gate Resistance RG Gate Resistance (Ohm) RG ,,,Gate Resistance (( )) 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4P254S 20 15 10 5 I C, Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC VGE = 5.0 5Ohm = 150 C = 200V = 15V 1000 VGE = 20V T J = 125 oC 100 0 0 20 40 60 80 100 120 SAFE OPERATING AREA 10 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4P254S L 50V 1 00 0V VC * 0 - 200V D .U .T. RL = 200V 4 X IC@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 200V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4P254S Case Outline and Dimensions -- TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2X 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) 2 3 -C- LEAD 1234- A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R * 14 .80 (.583 ) 14 .20 (.559 ) 4.30 (.1 70) 3.70 (.1 45) 0 .8 0 (.0 3 1 ) 3X 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) * 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5.45 (.2 15 ) L O N G E R L E A D E D (2 0m m ) V E R S IO N A V A IL A B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M C AS 2X 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s ion s in M illim e te rs a n d (In c h es ) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 4/2000 8 www.irf.com |
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